JPH046113B2 - - Google Patents

Info

Publication number
JPH046113B2
JPH046113B2 JP58040342A JP4034283A JPH046113B2 JP H046113 B2 JPH046113 B2 JP H046113B2 JP 58040342 A JP58040342 A JP 58040342A JP 4034283 A JP4034283 A JP 4034283A JP H046113 B2 JPH046113 B2 JP H046113B2
Authority
JP
Japan
Prior art keywords
layer
stripe
semiconductor laser
oscillation
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58040342A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59165487A (ja
Inventor
Saburo Yamamoto
Hiroshi Hayashi
Shinji Kaneiwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP4034283A priority Critical patent/JPS59165487A/ja
Publication of JPS59165487A publication Critical patent/JPS59165487A/ja
Publication of JPH046113B2 publication Critical patent/JPH046113B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
JP4034283A 1983-03-09 1983-03-09 半導体レ−ザアレイ素子 Granted JPS59165487A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4034283A JPS59165487A (ja) 1983-03-09 1983-03-09 半導体レ−ザアレイ素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4034283A JPS59165487A (ja) 1983-03-09 1983-03-09 半導体レ−ザアレイ素子

Publications (2)

Publication Number Publication Date
JPS59165487A JPS59165487A (ja) 1984-09-18
JPH046113B2 true JPH046113B2 (en]) 1992-02-04

Family

ID=12577954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4034283A Granted JPS59165487A (ja) 1983-03-09 1983-03-09 半導体レ−ザアレイ素子

Country Status (1)

Country Link
JP (1) JPS59165487A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61287289A (ja) * 1985-06-14 1986-12-17 Sharp Corp 光メモリ用半導体レ−ザ装置
IT1237120B (it) * 1989-11-03 1993-05-18 Lonati Srl Procedimento per l'esecuzione di disegni su calze con macchine circolari a doppio cilindro e dispositivo per la sua attuazione
CA2091302A1 (en) * 1992-03-11 1993-09-12 Ichiro Yoshida Semiconductor laser and process for fabricating the same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57139983A (en) * 1981-02-24 1982-08-30 Nec Corp Buried double heterojunction laser element

Also Published As

Publication number Publication date
JPS59165487A (ja) 1984-09-18

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